DDR3 - module - 2 GB - SO-DIMM 204-pin - 1600 MHz / PC3-12800 - CL11 - 1.5 V - unbuffered - non-ECC
| Main Specifications | |
|---|---|
| Product Description | Samsung - DDR3 - module - 2 GB - SO-DIMM 204-pin - 1600 MHz / PC3-12800 - unbuffered |
| Product Type | Memory module |
| Capacity | 2 GB |
| Memory Type | DDR3 SDRAM - SO-DIMM 204-pin |
| Upgrade Type | Generic |
| Data Integrity Check | Non-ECC |
| Speed | 1600 MHz (PC3-12800) |
| Latency Timings | CL11 (11-11-11) |
| Features | Single rank, eight banks, On-Die Termination (ODT), unbuffered |
| Voltage | 1.5 V |
| General | |
| Capacity | 2 GB |
| Upgrade Type | Generic |
| Memory | |
| Type | DRAM memory module |
| Technology | DDR3 SDRAM |
| Form Factor | SO-DIMM 204-pin |
| Module Height (inch) | 1.18 |
| Speed | 1600 MHz (PC3-12800) |
| Latency Timings | CL11 (11-11-11) |
| Data Integrity Check | Non-ECC |
| Features | Single rank, eight banks, On-Die Termination (ODT), unbuffered |
| Module Configuration | 256 x 64 |
| Chips Organization | 256 x 8 |
| Voltage | 1.5 V |
| Miscellaneous | |
| Compliant Standards | RoHS, Lead-Free, Halogen-free |